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| to ? 92l 1. emitter 2. collector 3. base to-92l plastic-encapsulate transistors 3CG8551 transistor (pnp) features z general purpose switching application z complementary to 3dg8051 maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =-100a,i e =0 -50 v collector-emitter breakdown voltage v (br)ceo i c =-10ma,i b =0 -40 v emitter-base breakdown voltage v (br)ebo i e =-100a,i c =0 -5 v collector cut-off current i cbo v cb =-50v,i e =0 -0.1 a collector cut-off current i ceo v ce =-40v,i b =0 -2 a emitter cut-off current i ebo v eb =-5v,i c =0 -0.1 a dc current gain h fe v ce =-2v, i c =-0.1a 100 320 collector-emitter saturation voltage v ce(sat) i c =-1a,i b =-0.1a -1 v transition frequency f t v ce =-10v,i c =-50ma, f=100mhz 150 mhz symbol parameter value unit v cbo collector-base voltage -50 v v ceo collector-emitter voltage -40 v v ebo emitter-base voltage -5 v i c collector current -2 a p c collector power dissipation 750 mw r ja thermal resistance from junction to ambient 167 / w t j junction temperature 150 t stg storage temperature -55~+150 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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